sot-363 plastic-encapsulate mosfets CJ3439KDW n channel+p channel mosfet feature sot-363 z surface mount package z low r ds (on) z operated at low logic level gate drive z esd protected gate z including a n-ch cj3134k and a p-ch cj3139k (independently) in a package application z load/ power switching z interfacing switching z battery management for ultra small portable electronics z logic level shift marking (49k=device code solid dot=pin 1 indicator) green compound normal compound absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit n-mosfet drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current (note 1) i d 0.75 a pulsed drain current (tp=10us) i dm 1.8 a p-mosfet drain-source voltage v ds -20 v gate-source voltage v gs 12 v continuous drain current (note 1) i d -0.66 a pulsed drain current (tp=10us) i dm -1.2 a temperature and thermal resistance thermal resistance from junction to ambient (note 1) r ja 833 /w junction temperature t j 150 storage temperature t stg -55~+150 lead temperature for soldering purposes(1/8?? from case for 10 s) t l 260 1 of 2 sales@zpsemi.com www.zpsemi.com CJ3439KDW
n-ch mosfet electrical characteristics(t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 20 v zero gate voltage drain current i dss v ds =20v,v gs = 0v 1 a gate-body leakage current i gss v gs =12v, v ds = 0v 50 ua gate threshold voltage (note 2) v gs(th) v ds =v gs , i d =250a 0.35 1 v drain-source on-resistance (note 2) r ds(on) v gs =4.5v, i d =0.65a 380 m ? v gs =2.5v, i d =0.55a 450 m ? v gs =1.8v, i d =0.45a 800 m ? forward tranconductance (note 2) g fs v ds =10v, i d =0.8a 1.6 s diode forward voltage v sd i s =0.15a, v gs = 0v 1.2 v dynamic characteristics (note 4) input capacitance c iss v ds =16v,v gs =0v,f =1mhz 79 120 pf output capacitance c oss 13 20 pf reverse transfer capacitance c rss 9 15 pf switching characteristics (note 3,4) turn-on delay time t d(on) v gs =4.5v,v ds =10v, i d =500ma,r gen =10 ? 6.7 ns turn-on rise time t r 4.8 ns turn-off delay time t d(off) 17.3 ns turn-off fall time t f 7.4 ns p-ch mosfet electrical characteristics(t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -20 v zero gate voltage drain current i dss v ds =-20v,v gs = 0v -1 a gate-body leakage current i gss v gs =12v, v ds = 0v 20 ua gate threshold voltage (note 2) v gs(th) v ds =v gs , i d =-250a -0.35 -1.1 v drain-source on-resistance (note 2) r ds(on) v gs =-4.5v, i d =-1a 520 m ? v gs =-2.5v, i d =-0.8a 700 m ? v gs =-1.8v, i d =-0.5a 950 m ? forward tranconductance (note 2) g fs v ds =-10v, i d =-0.54a 1.2 s diode forward voltage v sd i s =-0.5a, v gs = 0v -1.2 v dynamic characteristics (note 4) input capacitance c iss v ds =-16v,v gs =0v,f =1mhz 113 170 pf output capacitance c oss 15 25 pf reverse transfer capacitance c rss 9 15 pf switching characteri stics (note 3, 4) turn-on delay time t d(on) v gs =-4.5v,v ds =-10v, i d =-200ma,r gen =10 ? 9 ns turn-on rise time t r 5.8 ns turn-off delay time t d(off) 32.7 ns turn-off fall time t f 20.3 ns notes : 1.surface mounted on fr4 board using the minimum recommended pad size. 2. pulse test : pulse width=300 s, duty cycle 2%. 3. switching characteristics are indep endent of operating junction temperature. 4. graranted by design not subject to producting. 2 of 2 sales@zpsemi.com www.zpsemi.com CJ3439KDW
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